052-6349 rev c 3-2012 apt25gt120brdl(g) typical performance curves 1200v apt25gt120brdl(g) *g denotes rohs compliant, pb free terminal finish. t o -2 4 7 g c e c e g the thunderbolt igbt ? used in this resonant mode combi is a new generation of high voltage power igbts. using non- punch through technology, the thunderblot igbt ? offers superior ruggedness and ultrafast switching speed. resonant mode igbt ? maximum ratings all ratings: t c = 25c unless otherwise speci ? ed. static electrical characteristics characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i c = 1.5ma) gate threshold voltage (v ce = v ge , i c = 1ma, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 25a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 25a, t j = 125c) collector cut-off current (v ce = 1200v, v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = 1200v, v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) symbol v (br)ces v ge(th) v ce(on) i ces i ges units volts a na symbol v ces v ge i c1 i c2 i cm ssoa p d t j ,t stg t l apt25gt120brdl(g) 1200 30 5425 75 75a @ 1200v 347 -55 to 150 300 unit volts amps watts c parameter collector-emitter voltage gate-emitter voltage continuous collector current @ t c = 25c continuous collector current @ t c = 110c pulsed collector current 1 switching safe operating area @ t j = 150c total power dissipation operating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. min typ max 1200 4.5 5.5 6.5 2.7 3.2 3.7 3.9 200 1250 120 features ? low conduction loss ? low gate charge ? ultrafast tail current shutof ? low forward diode voltage (v f ) ? ultrasoft recovery diode ? ssoa rated ? rohs compliant typical applications ? induction heating ? welding ? medical ? high power telecom ? resonant mode phase shifted bridge microsemi website - http://www.microsemi.com downloaded from: http:///
052-6349 rev c 3-2012 apt25gt120brdl(g) thermal and mechanical characteristics unit c/w gm min typ max .36 1.4 5.9 characteristicjunction to case (igbt) junction to case (diode) package weight symbol r jc r jc w t dynamic characteristics symbol c ies c oes c res v gep q g q ge q gc ssoa t d(on) t r t d(off) t f e on1 e on2 e off t d(on) t r t d(off) t f e on1 e on2 e off test conditions capacitance v ge = 0v, v ce = 25v f = 1 mhz gate charge v ge = 15v v ce = 600v i c = 25a t j = 150c, r g = 5 , v ge = 15v, l = 100 h,v ce = 1200v inductive switching (25c) v cc = 800v v ge = 15v i c = 25a r g = 5 t j = +25c inductive switching (125c) v cc = 800v v ge = 15v i c = 25a r g = 5 t j = +125c characteristicinput capacitance output capacitance reverse transfer capacitance gate-to-emitter plateau voltage total gate charge 3 gate-emitter charge gate-collector ("miller ") charge switching safe operating area turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 4 turn-on switching energy (diode) 5 5 turn-off switching energy 6 min typ max 1845 170 110 10.0 170 20 100 75 14 27 150 36 930 1860 720 14 27 175 45 925 3265 965 unit pf v nc a ns j ns j 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages 3 see mil-std-750 method 3471. 4 e on1 is the clamped inductive turn-on energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. tested in inductive switching test circuit shown in ? gure 21, but with a silicon carbide diode. 5 e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switching loss. (see figures 21, 22.) 6 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. (see figures 21, 23.) microsemi reserves the right to change, without notice, the speci cations and information contained herein. downloaded from: http:///
052-6349 rev c 3-2012 apt25gt120brdl(g) typical performance curves v gs(th) , threshold voltage v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) (normalized) i c, dc collector current(a) v ce , collector-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) i c , collector current (a) i c = 25a t j = 25c 250 s pulse test<0.5 % duty cycle 8070 60 50 40 30 20 10 0 8070 60 50 40 30 20 10 06 5 4 3 2 1 0 1.101.05 1.00 0.95 0.90 0.85 0.80 0.75 0 2 4 6 8 0 5 10 15 20 0 2 4 6 8 10 12 14 0 20 40 60 80 100 120 140 160 180 200 6 8 10 12 14 16 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 100 8060 40 20 0 1614 12 10 86 4 2 0 6 5 4 3 2 1 0 8070 60 50 40 30 20 10 0 t j = 125c t j = 25c t j = 25c. 250 s pulse test <0.5 % duty cycle v ge = 15v. 250 s pulse test <0.5 % duty cycle t j = 125c t j = 25c v ge = 15v v ce = 960v v ce = 600v v ce = 240v v ce , collecter-to-emitter voltage (v) v ce , collecter-to-emitter voltage (v) figure 1, output characteristics(t j = 25c) figure 2, output characteristics (t j = 125c) v ge , gate-to-emitter voltage (v) gate charge (nc) figure 3, transfer characteristics figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 5, on state voltage vs gate-to- emitter voltage figure 6, on state voltage vs junction temperature t j , junction temperature (c) t c , case temperature (c) figure 7, threshold voltage vs. junction temperature figure 8, dc collector current vs case temperature i c = 12.5a i c = 25a i c = 50a i c = 12.5a i c = 25a i c = 50a t j = -55c 13v 11v 10v 9v 12v 8v 7v 15v t j = -55c downloaded from: http:///
052-6349 rev c 3-2012 apt25gt120brdl(g) v ge =15v,t j =125c v ge =15v,t j =25c v ce = 800v r g = 5 l = 100 h switching energy losses ( j) e on2 , turn on energy loss ( j) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses ( j) e off , turn off energy loss ( j) t f, fall time (ns) t d (off) , turn-off delay time (ns) i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 9, turn-on delay time vs collector current figure 10, turn-off delay time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 11, current rise time vs collector current figure 12, current fall time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 13, turn-on energy loss vs collector current figure 14, turn off energy loss vs collector current r g , gate resistance (ohms) t j , junction temperature (c) figure 15, switching energy losses vs. gate resistance figure 16, switching energy losses vs junction temperature v ce = 800v v ge = +15v r g = 5 v ce = 800v t j = 25c , or 125c r g = 5 l = 100 h 3025 20 15 10 50 7060 50 40 30 20 10 0 10,000 8,0006,000 4,000 2,000 0 18,00016,000 14,000 12,000 10,000 8,0006,000 4,000 2,000 0 200180 160 140 120 100 8060 40 20 0 5045 40 35 30 25 20 15 10 50 25002000 1500 1000 500 0 9,0008,000 7,000 6,000 5,000 4,000 3,000 2,000 1,000 0 v ge = 15v v ce = 800v v ge = +15v r g = 5 v ce = 800v v ge = +15v r g = 5 10 15 20 25 30 35 40 45 50 55 10 15 20 25 30 35 40 45 50 55 10 15 20 25 30 35 40 45 50 55 10 15 20 25 30 35 40 45 50 55 10 15 20 25 30 35 40 45 50 55 10 15 20 25 30 35 40 45 50 55 0 10 20 30 40 50 0 25 50 75 100 125 r g = 5 , l = 100 h, v ce = 800v t j = 125c t j = 25c t j = 125c t j = 25c r g = 5 , l = 100 h, v ce = 800v t j = 25 or 125c,v ge = 15v t j = 125c, v ge = 15v t j = 25c, v ge = 15v e on2, 50a e off, 50a e on2, 25a e off, 25a e on2, 12.5a e off, 12.5a v ce = 800v v ge = +15v t j = 125c e on2, 50a e off, 50a e on2, 25a e off, 25a e on2, 12.5a e off, 12.5a downloaded from: http:///
052-6349 rev c 3-2012 apt25gt120brdl(g) typical performance curves 0.400.35 0.30 0.25 0.20 0.15 0.10 0.05 0 z jc , thermal impedance (c/w) 0.3 d = 0.9 0.7 single pulse rectangular pulse duration (seconds) figure 19, maximum effective transient thermal impedance, junction-to-case vs pulse duration 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 3,0001,000 500100 5010 8070 60 50 40 30 20 10 0 c, capacitance ( p f) i c , collector current (a) v ce , collector-to-emitter voltage (volts) v ce , collector to emitter voltage figure 17, capacitance vs collector-to-emitter voltage figure 18,minimim switching safe operating area 0 10 20 30 40 50 0 200 400 600 800 1000 1200 1400 5 10 15 20 25 30 35 40 45 50 f max , operating frequency (khz) i c , collector current (a) figure 20, operating frequency vs collector current 140 5010 51 0.5 0.1 0.05 f max = min (f max , f max2 ) 0.05 f max1 = t d(on) + t r + t d(off) + t f p diss - p cond e on2 + e off f max2 = p diss = t j - t c r jc c oes c res c ies peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: downloaded from: http:///
052-6349 rev c 3-2012 apt25gt120brdl(g) apt15dl120 i c a d.u.t. v ce figure 21, inductive switching test circui t v cc figure 22, turn-on switching waveforms and de? nitions figure 23, turn-off switching waveforms and de? nitions t j = 125c collector current collector voltage gate voltage switching energy 5% 10% t d(on) 90% 10% t r 5% t j = 125c collector voltage collector current gate voltage switching energy 0 90% t d(off) 10% t f 90% downloaded from: http:///
052-6349 rev c 3-2012 apt25gt120brdl(g) typical performance curves 0 0.2 0.4 0.5 0.8 1.2 1.4 1.6 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 1.0 rectangular pulse duration (seconds) figure 1. maximum effective transient thermal impedance, junction-to-case vs. pulse duration peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: z jc , thermal impedance (c/w) characteristic / test conditions maximum average forward current (t c = 115c, duty cycle = 0.5) rms forward current (square wave, 50% duty)non-repetitive forward surge current (t j = 45c, 8.3ms) symbol i f (av) i f (rms) i fsm symbol v f characteristic / test conditions i f = 15a forward voltage i f = 30a i f = 15a, t j = 125c static electrical characteristics unit amps unit volts min typ max 1.6 2.1 2.0 1.6 apt25gt120brdl(g) 1530 60 dynamic characteristics maximum ratings all ratings: t c = 25c unless otherwise speci ? ed. ultrafast soft recovery anti-parallel diode min typ max - 51 - 523 - 1492 - 7 - - 716 - 2886 - 8 - - 233 - 2873 - 25 unit ns nc amps ns nc amps ns nc amps characteristic reverse recovery time reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current symbol t rr t rr q rr i rrm t rr q rr i rrm t rr q rr i rrm test conditions i f = 15a, di f /dt = -200a/ s v r = 800v, t c = 25 c i f = 15a, di f /dt = -200a/ s v r = 800v, t c = 125 c i f = 15a, di f /dt = -1000a/ s v r = 800v, t c = 125 c i f = 1a, di f /dt = -100a/ s, v r = 30v, t j = 25 c 0.5 single pulse 0.1 0.3 0.7 0.9 0.05 downloaded from: http:///
052-6349 rev c 3-2012 apt25gt120brdl(g) 0 10 20 30 40 50 60 0 1 2 3 4 0 100 200 300 400 500 600 700 800 0 200 400 600 800 1000 0 5 10 15 20 25 30 35 40 45 25 50 75 100 125 150 0 5 10 15 20 25 30 0 200 400 600 800 1000 0 0.2 0.4 0.6 0.8 1.0 1.2 0 25 50 75 100 125 150 0 1000 2000 3000 4000 5000 0 200 400 600 800 1000 duty cycle = 0.5 t j = 45c i rrm q rr t rr 30a 15a 7.5a 30a t j = 55c t j = 150c v f , anode-to-cathode voltage (v) figure 2, forward current vs. forward voltage i f , forward current (a) t j = 25c t j = 125c -di f /dt, current rate of change (a/ s ) figure 3, reverse recovery time vs. current rate of change t rr , collector current (a) q rr , reverse recovery charge (nc) t j , junction temperature (c) figure 6, dynamic parameters vs junction temperature k f , dynamic parameters (normalized to 1000a/ s) i rrm , reverse recovery current (a) case temperature (c) figure 7, maximum average forward current vs. case temperature i f(av) (a) 0 100 200 300 400 500 600 0 100 200 300 400 500 600 700 80 0 v r , reverse voltage (v) figure 8, junction capacitance vs. reverse voltage c j , junction capacitance (pf) t j = 125c v r = 800v t j = 125c v r = 800v -di f /dt, current rate of change (a/ s ) figure 4, reverse recovery charge vs. current rate of change -di f /dt, current rate of change (a/ s ) figure 5, reverse recovery current vs. current rate of change t j = 125c v r = 800v 15a 7.5a 7.5a 15a 30a downloaded from: http:///
052-6349 rev c 3-2012 apt25gt120brdl(g) typical performance curves 4 3 1 2 5 5 zer o 1 2 3 4 di f /dt - rate of diode current change through zero crossing. i f - forward conduction current i rrm - maximum reverse recovery current . t rr - revers e r ecovery time, measured from zero crossing wher e diode q rr - area under the curve defined by i rrm and t rr . current goes from positive to negative, to the point at which the straight line through i rrm and 0.25 i rrm passes through zero . figure 32. diode test circui t figure 33, diode reverse recovery waveform and definitions 0.25 i rrm pearson 2878 current transformer di f /dt adjus t 30 h d.u.t. +18v 0v v r t rr / q rr wavefor m to -247 package outlin e e1 sac: tin, silver, copper 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max . 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 5.45 (.215) bsc 3.55 (.138)3.81 (.150) 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) dimensions in millimeters and (inches ) 2-plcs. collector (cathode ) emitte r (anode ) gate collector (cathode) apt10078bll downloaded from: http:///
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